NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

Instruction: Click on selected Tab for more information.

Si

Tm/Si

Tm₅Si₃

thulium/silicon

CAS Registry No:

element, lanthanide, rare earth, silicide

Author Name(s):

Gokhale S., Mahamuni S., Joshi K., Nigavekar A.S., Kulkarni S.K.

Surf. Sci. 257, 157

Pub Year:

1991

book All Records in this Publication

Photoelectron Line

Line Designation:

2p

Binding Energy (eV):

98.00

Energy Uncertainty:

0.1

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

125 A thick Tm film was deposited onto p-Si(111) wafer an annealed (T = 473 K) in situ. The Si wafer was cleaned by Ar+ ion bombardment and subsequently annealed (T = 1100 K). The total FWHM is 1.3 eV. The intensity ratio of the Gaussian/Lorentzian comp

crystal, reacted, semiconductor, thin film, vapor deposited and heated

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

X-ray Diffraction

Specimen Temperature (K):

300

An error has occurred. This application may no longer respond until reloaded. Reload 🗙