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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
Si
Formula:
Si
Name:
silicon
CAS Registry No:
7440-21-3
Class:
element, II-VI semiconductor, IV semiconductor
Author Name(s):
Morgan S.J., Williams R.H., Mooney J.M.
Journal:
Appl. Surf. Sci. 56, 493
DOI:
10.1016/0169-4332(92)90277-5
Pub Year:
1992
book
All Records in this Publication
Data Type:
Photoelectron Line
Line Designation:
2p
Binding Energy (eV):
99.22
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
0.7
Calibration:
Pt4f7 = 71.12
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
p-type Si(100)-(2x1) with a resistivity of 3 ohm cm was cleaned by annealing (T =1023 K, time = 20 min). Peak locations: Voigt function.
Specimen:
crystal, semiconductor
Method of Determining Specimen Composition:
X-ray Photoelectron Spectroscopy
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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