NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

Si/Ir

IrSi

silicon/iridium

CAS Registry No:

7440-21-3

element, silicide

Author Name(s):

Morgan S.J., Williams R.H., Mooney J.M.

Appl. Surf. Sci. 56, 493

Pub Year:

1992

book All Records in this Publication

Photoelectron Line

Line Designation:

2p

Binding Energy (eV):

99.52

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

0.7

Calibration:

Pt4f7 = 71.12

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

7 A Ir/p-type Si(100)-(2x1) with a resistivity of 3 ohm cm. The substrate was cleaned by annealing (T =1023 K, time = 20 min). The thickness was measured using a quartz-crystal thickness monitor. Peak locations: Voigt function.

reacted, thin layer, vapor deposited

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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