NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 4

Data Type:

Interface Core-Level Shift

Line Designation:

INT-3d

Interface Core-Level Shift:

-0.67

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

15 A Ti/GaAs (100). GaAs(100) wafer was Si doped at ~1E18 cm-3. Ti was evaporated from resistively heated W boat and annealed at 633 K. The ammount of metal deposited was monitored with a quartz- crystal oscillator.