NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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As

GaAs₀.₈₇

gallium arsenide(GaAs0.87)

CAS Registry No:

arsenide, III-V semiconductor

Doublet Separation for Photoelectron Lines

Line Designation:

DS-3p

Double Separation (eV):

4.75

Energy Uncertainty:

Background Subtraction Method:

Linear

Peak Location Method:

Gaussian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

The GaAs(110) wafer was initially degreased and wet etched in H2SO4:H2O2:H2O (5:1:1). The surface oxide was removed in situ by Ar+ ion bombardment (Ep = 3 keV, j = 1E15 ions/cm2) and annealing. Emission angle = 50 degrees.

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