NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Ga

Si/GaAsOx/GaAs

Ga₂O₃

silicon/gallium arsenide oxides/gallium arsenide

CAS Registry No:

arsenic, arsenide, element, III-V semiconductor, non-stoichiometric oxide, oxide

Author Name(s):

Cuberes M.T., Sacedon J.L.

Surf. Sci. 251, 92

Pub Year:

1991

book All Records in this Publication

Chemical Shift

Line Designation:

CS-2p_3/2

Chemical Shift (eV):

0.90

Energy Uncertainty:

Background Subtraction Method:

Shirley

Peak Location Method:

other type of curve fit

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Mg

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

3.2 A Si/5.2 A GaAsOx/Si-doped GaAs(100). The GaAsOx was grown by electron stimulated oxidation on GaAs(100). The energy is referenced to the bulk state of the Ga3d line. The thickness was measured by XPS.

multilayer structure, oxidizing atmosphere, thin layer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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