NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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In

In₀.₃Ga₀.₇As/InP

In₀.₃Ga₀.₇As bulk state

gallium indium arsenide ss/indium phosphide(In0.3Ga0.7As/InP)

CAS Registry No:

arsenide, III-V semiconductor, solid solution

Author Name(s):

Erickson J.W., Theis W.M., Cole T., Green A.K., Rehn V.

Surf. Sci. 274, 363

Pub Year:

1992

book All Records in this Publication

Photoelectron Line

Line Designation:

4d_5/2

Binding Energy (eV):

17.05

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.43

Lorentzian Width (eV):

0.21

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

70

Overall Energy Resolution (eV):

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

80 A InGaAs/InP(100)-(4x2). Coherently strained film was grown at 850 - 860 K. The sample was decapped by heating to about 650 K. The Gaussian width is an intrinsic one. The spectra were recorded at normal emission. Branching ratio = 0.67.

annealed, crystal, molecular beam epitaxy, semiconductor, thin film

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Reflection High-Energy Electron Diffraction

Specimen Temperature (K):

300

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