NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

Instruction: Click on selected Tab for more information.

Element:

Formula:

GaAs

Name:

gallium(III) arsenide

CAS Registry No:

1303-00-0

Class:

arsenide, II-VI semiconductor, III-V semiconductor

Author Name(s):

Komeda T., Anderson S.G., Seo J.M., Schabel M.C., Weaver J.H.

Journal:

J. Vac. Sci. Technol. A 9, 1964

DOI:

Pub Year:

1991

book All Records in this Publication

Data Type:

Surface Core-level Shift

Line Designation:

SS-3d

Surface Core-Level Shift (eV):

-0.36

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

0.25

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type (p-type) Si- (Zn-) doped GaAs(110) with a carrier concentration of 2E18 cm-3 (1E17 cm -3). Peak locations: Doniach - Sunjic & Gaussian.

Specimen:

cleaved crystal, cooled, crystal, semiconductor, vacuum cleaved

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

20, 300