NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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As

Sm/GaAs

samarium/gallium arsenide

CAS Registry No:

1303-00-0

arsenide, III-V semiconductor, IV-VI semiconductor

Author Name(s):

Komeda T., Anderson S.G., Seo J.M., Schabel M.C., Weaver J.H.

J. Vac. Sci. Technol. A 9, 1964

Pub Year:

1991

book All Records in this Publication

Surface Core-level Shift

Line Designation:

SS-3d

Surface Core-Level Shift (eV):

-0.36

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

90

Overall Energy Resolution (eV):

0.25

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

0.67, 1.33 and 2.33 ML Sm were deposited onto n-type (p-type) Si- (Zn-) doped GaAs(110) with a carrier concentration of 2E18 cm-3 (1E17 cm -3) at 300 K. Peak locations: Doniach - Sunjic & Gaussian.

cleaved crystal, crystal, semiconductor, vacuum cleaved, vapor deposited

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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