NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 12

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

Sm/GaAs

INT-3d

-0.72

Sm/GaAs

INT-3d

-0.88

Sm/GaAs

INT-3d

-0.88

Sm/GaAs

INT-3d

-0.64

Sm/GaAs

INT-3d

-0.64

Sm/GaAs

INT-3d

-0.33

Sm/GaAs

INT-3d

-1.75

GaAs

SS-3d

0.31

Sm/GaAs

SS-3d

-0.36

Sm/GaAs

SS-3d

-0.36

GaAs

SS-3d

-0.36

Sm/GaAs

SS-3d

-0.36

Data Type:

Interface Core-Level Shift

Line Designation:

INT-3d

Interface Core-Level Shift:

-0.64

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

0.25

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

1.17, 1.66, 2.66, and 3.66 ML Sm were deposited onto n-type (p-type) Si- (Zn-) doped GaAs(110) with a carrier concentration of 2E18 cm-3 (1E17 cm -3 at 20 K. Peak locations: Doniach - Sunjic & Gaussian.