NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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As

GaAs₀.₁₃O₂.₁

As(III) state

gallium arsenic oxide (GaAs0.13O2.1)

CAS Registry No:

arsenic, non-stoichiometric oxide, oxide

Author Name(s):

Hollinger G., Skheyta - Kabbani R., Gendry M.

Phys. Rev. B 49, 11159

Pub Year:

1994

book All Records in this Publication

Chemical Shift

Line Designation:

CS-3d

Chemical Shift (eV):

2.91

Energy Uncertainty:

0.3

Background Subtraction Method:

other

Peak Location Method:

other type of curve fit

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Ag = 84.00,368.27

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

The oxide was formed using a constant flow of 101325 Pa of O2 at 623 K for 2 h. The intensity ratio of As(V)/As(III) components was 0.41. The interfacial As layer thickness was 3.0 A. The thickness was measured by ellipsometry. The chemical shift is relative to the substrate atoms.

oxidizing atmosphere, oxygen pressure, thermal oxide, wafer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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