NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 40

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

InAs₁.₂O₅.₁

CS-3d

3.25

InAs₁.₁O₄.₇

CS-3d

4.34

InAs₁.₁O₄.₇

CS-3d

3.07

GaAs₁.₄O₄.₁

CS-3d

2.93

InAs₀.₈₈O₃.₃

CS-3d

4.32

InAs₀.₈₈O₃.₃

CS-3d

3.25

InAs₂O₈

CS-3d

4.24

InAs₂O₈

CS-3d

3.05

InAs₁.₂O₅.₁

CS-3d

4.47

GaAs₀.₁₅O₂.₂

CS-3d

3.12

GaAs₁.₄O₃.₁

CS-3d

4.13

GaAs₁.₄O₃.₁

CS-3d

2.91

GaAs₁.₅O₄

CS-3d

4.37

GaAs₁.₅O₄

CS-3d

3.09

GaAs₁.₄O₄.₁

CS-3d

4.24

GaAs₀.₃₄O₂.₈

CS-3d

4.29

GaAs₀.₃₄O₂.₈

CS-3d

3.03

GaAs₀.₁₃O₂.₁

CS-3d

4.32

GaAs₀.₁₃O₂.₁

CS-3d

2.91

GaAs₀.₁₅O₂.₂

CS-3d

4.48

GaAs

18.80

GaAsO₄

20.90

Ga(AsO₃)₃

20.40

3d_5/2

444.00

InAs

3d_5/2

444.30

In₂O₃

3d_5/2

444.30

InAsO₄

3d_5/2

444.90

In₂O₃

529.80

As₂O₃

531.50

As₂O₅

532.00

Chemical Shift

CS-3d

3.25

0.3

Background Subtraction Method:

other

Peak Location Method:

other type of curve fit

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au,Ag = 84.00,368.27

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

The oxide was formed using a constant flow of 101325 Pa of O2 at 623 K for 2 h. The intensity ratio of As(V)/As(III) components was 0.24. The oxide thickness measured by ellipsometry was 35 A. The interfacial As layer thickness was 0.6 A. The chemical shift is relative to the substrate atoms.