Reliable (reported energy within 300 eV of a reference energy)
Comment:
Ga-doped Ge(111)-c(2x8) with a resistivity of 0.004 - 0.1 ohm cm. LEED pattern was achieved after repeated cycles of Ar+ ion sputtering and annealing (T = 923K, time = 10 min). The Gaussian FWHM was 0.65 eV at 300 K.