NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Ge

Sn/Ge

rest atoms corresponding to ₇/₃₆ ML

tin/germanium

CAS Registry No:

7440-56-4

element

Author Name(s):

Gothelid M., Grehk T.M., Hammar M., Karlsson U.O., Flodstrom S.A.

Phys. Rev. B 48, 2012

Pub Year:

1993

book All Records in this Publication

Surface Core-level Shift

Line Designation:

SS-3d_5/2

Surface Core-Level Shift (eV):

-0.64

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.75

Lorentzian Width (eV):

0.30

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

70, 90,110

Overall Energy Resolution (eV):

0.09

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Ga-doped Ge(111)-(7x7)-Sn with a resistivity of 0.004 - 0.1 ohm cm. The (7x7) reconstruction was prepared by deposition of 0.4 ML of Sn, and subsequent annealing (T = 773 K) for a few minutes.

annealed, cooled, crystal, semiconductor, wafer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

77, 300

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