NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 16

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

GaAsOx/GaAs

CS-3d_5/2

3.10

GaAsOx/GaAs

CS-3d_5/2

4.50

Si/GaAsOx/GaAs

CS-3d

0.55

GaAs

CS-3d_5/2

0.82

GaAsOx/GaAs

CS-3d_5/2

0.70

GaAsOx/GaAs

CS-3d_5/2

1.30

Si/GaAsOx/GaAs

CS-2p

0.95

Si/GaAsOx/GaAs

CS-2p

1.75

Si/GaAsOx/GaAs

CS-2p

2.50

Si/GaAsOx/GaAs

CS-2p

3.10

GaAs

CS-3d_5/2

-0.67

GaAs

DS-3d

0.69

Si/GaAsOx/GaAs

DS-2p

0.60

GaAs

DS-3d

0.45

GaAs

SS-3d_5/2

0.29

GaAs

SS-3d_5/2

-0.40

Data Type:

Doublet Separation for Photoelectron Lines

Line Designation:

DS-3d

Double Separation (eV):

0.69

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

126.10

Overall Energy Resolution (eV):

0.35

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Na-doped (n = 1.7E18 cm-3) As-capped p-GaAs(110)-(1x1) was annealed until Ga was segregated. The Gaussian FWHM represents the intrinsic value, not including the experimental resolution.

Specimen:

annealed, cleaved crystal, crystal, semiconductor, vacuum cleaved

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300