NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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As

GaAs

gallium(III) arsenide

CAS Registry No:

1303-00-0

arsenide, II-VI semiconductor, III-V semiconductor

Author Name(s):

Jimenez I., Palomares F.J., Sacedon J.L.

Phys. Rev. B 49, 11117

Pub Year:

1994

book All Records in this Publication

Doublet Separation for Photoelectron Lines

Line Designation:

DS-3d

Double Separation (eV):

0.69

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

126.10

Overall Energy Resolution (eV):

0.35

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Na-doped (n = 1.7E18 cm-3) As-capped p-GaAs(110)-(1x1) was annealed until Ga was segregated. The Gaussian FWHM represents the intrinsic value, not including the experimental resolution.

annealed, cleaved crystal, crystal, semiconductor, vacuum cleaved

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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