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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
N
Formula:
HN
3
/Si
XPS Formula:
H
-
N=N*=&N/Si
Name:
hydrogen azide/silicon
CAS Registry No:
7782-79-8
Class:
azide
Author Name(s):
Chu J.C.S., Bu Y., Lin M.C.
Journal:
Surf. Sci. 284, 281
DOI:
10.1016/0039-6028(93)90499-A
Pub Year:
1993
book
All Records in this Publication
Data Type:
Photoelectron Line
Line Designation:
1s
Binding Energy (eV):
402.80
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
1.7
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
Yes
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Si2p = 99.34
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with one-point correction of energy scale
Comment:
2.0 +- 0.5 L HN3/B-doped Si(111)-(7x7) with a resistivity of 10 ohm cm. The substrate was annealed at temperature more than 1500 K.
Specimen:
adsorbed, cooled, thin layer
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
120
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