NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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As

GaAs/Y

gallium arsenide/yttrium

CAS Registry No:

1303-00-0

arsenide, III-V semiconductor

Author Name(s):

Mesarwi A., Ignatiev A.

Surf. Sci. 282, 371

Pub Year:

1993

book All Records in this Publication

Photoelectron Line

Line Designation:

3d

Binding Energy (eV):

39.60

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

7.5 ML Y/GaAs(100). The yttrium coverage was estimated by XPS. 1E16 cm-3. The substrate was cleaned by Ar+ ion bombardment (Ep = 1 keV, j = 10 microamperes/cm2, time = 30 min) and subsequently annealed (T = 723 K, time = 15 min) by indirect electron bombardment. This was repeated several times

multilayer, reacted, thin layer, vapor deposited

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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