NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 17

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

O₂/GaAs

CS-3d

3.20

O₂/GaAs

CS-3d

0.00

O₂/Y/GaAs

CS-3d

3.50

O₂/Y/GaAs

CS-3d

0.00

O₂/GaAs

CS-3d

3.20

O₂/GaAs

CS-3d

0.00

O₂/Y/GaAs

CS-3d

3.50

O₂/Y/GaAs

CS-3d

1.30

3d_5/2

154.00

Y/GaAs

3d_5/2

156.40

Y/GaAs

3d_5/2

156.40

GaAs

41.00

GaAs/Y

40.30

GaAs/Y

39.60

GaAs

19.00

GaAs/Y

18.00

GaAs/Y

17.00

Chemical Shift

CS-3d

1.30

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Au4f7 = 84.00

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

1E13 L O2 were adsorbed onto 3 ML Y/GaAs(100) at 673 K. The energy is referenced to the bulk state of the Ga3d line. The substrate was cleaned by Ar+ ion bombardment (Ep = 1 keV) and annealing (T = 723 K).

Specimen:

multilayer structure, oxidizing atmosphere, oxygen pressure, vapor deposited

Method of Determining Specimen Composition:

X-ray Photoelectron Spectroscopy

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300