NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 12

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

DS-3d

0.60

Pb/Ge

DS-3d

0.59

Pb/Ge

DS-3d

0.60

Pb/Ge

DS-3d

0.58

Pb/Ge

INT-3d_5/2

-0.26

Pb/Ge

INT-3d_5/2

-0.18

Pb/Ge

INT-3d_5/2

0.47

Pb/Ge

INT-3d_5/2

-0.18

Pb/Ge

INT-3d_5/2

0.48

3d_5/2

29.44

SS-3d_5/2

0.28

SS-3d_5/2

0.77

Data Type:

Surface Core-level Shift

Line Designation:

SS-3d_5/2

Surface Core-Level Shift (eV):

0.77

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.310

Lorentzian Width (eV):

0.130

Use of X-ray Monochromator:

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

0.17

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Ge(111)-c(2x8). The sample was cleaned by several cycles of Ar+ ion bombardment (Ep = 500 eV) while annealing at 773 K followed by 15 min anneals at 1073 K. Peak locations: Voigt function. Branching ratio = 0.620. The intensity ratio of the surface/bulk components was 0.225.

Specimen:

crystal, semiconductor, sputtered and heated

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

X-ray Diffraction, High-energy Electron Diffraction

Specimen Temperature (K):

300