NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Ge

Ge

germanium

CAS Registry No:

7440-56-4

element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Author Name(s):

Carlisle J.A., Miller T., Chiang T.-C.

Phys. Rev. B 47, 3790

Pub Year:

1993

book All Records in this Publication

Surface Core-level Shift

Line Designation:

SS-3d_5/2

Surface Core-Level Shift (eV):

0.77

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.310

Lorentzian Width (eV):

0.130

Use of X-ray Monochromator:

No

Anode Material:

other source

X-ray Energy:

90

Overall Energy Resolution (eV):

0.17

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Ge(111)-c(2x8). The sample was cleaned by several cycles of Ar+ ion bombardment (Ep = 500 eV) while annealing at 773 K followed by 15 min anneals at 1073 K. Peak locations: Voigt function. Branching ratio = 0.620. The intensity ratio of the surface/bulk components was 0.225.

crystal, semiconductor, sputtered and heated

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

X-ray Diffraction, High-energy Electron Diffraction

Specimen Temperature (K):

300

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