NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

Si

bulk state

silicon

CAS Registry No:

7440-21-3

element, II-VI semiconductor, IV semiconductor

Author Name(s):

Weitering H.H., Chen J., DiNardo N.J., Plummer E.W.

Phys. Rev. B 48, 8119

Pub Year:

1993

book All Records in this Publication

Photoelectron Line

Line Designation:

2p_3/2

Binding Energy (eV):

99.31

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.55

Lorentzian Width (eV):

0.317

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

120

Overall Energy Resolution (eV):

0.5

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

Si(111)-(R3xR3)R30-B. The surface was prepared by exposing the clean lightly-doped n-type surface (7x7) with a resistivity of 1 ohm cm to B10H14 and by subsequent annealing (T = 1173 K). The relative intensity was 0.59. Branching ratio = 0.5.

cooled, crystal, semiconductor

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

77, 300

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