NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Sn

Sn₂S₃

tin(II) tin(IV) trisulfide

CAS Registry No:

chalcogenide, II-VI semiconductor, IV-VI semiconductor, sulfide

Author Name(s):

Ettema A.R.H.F., Haas C.

J. Phys. Cond. Matter 5, 3817

Pub Year:

1993

book All Records in this Publication

Photoelectron Line

Line Designation:

4d

Binding Energy (eV):

25.90

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

2.3

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

The sample was synthesized by heating Sn with the correct molar amount of S for one week. After cooling, small crystals were selected. The sample was cleaned by stripping with Scotch tape

annealed, crystal, pelletized, scraped, semiconductor

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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