NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

Si

dimer up atoms

silicon

CAS Registry No:

7440-21-3

element, II-VI semiconductor, IV semiconductor

Author Name(s):

Johansson L.S.O., Grehk T.M., Gray S.M., Johansson M., Flodstrom A.S.

Nucl. Instruments Methods in Phys. Res. Sec. B 97, 364

Pub Year:

1995

book All Records in this Publication

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS1-2p_3/2

Surface Core-Level Shift (eV) for the first Layer of Atoms:

-0.49

Energy Uncertainty:

0.05

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.265

Lorentzian Width (eV):

0.085

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

130

Overall Energy Resolution (eV):

0.1

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type P-doped Si(100)-(2x1) with a resistivity of 0.67 - 1.33 ohm cm was prepared by resistive heating to 1123 - 1173 K followed by a slow cool down process. Branching ratio = 0.5. The Gaussian and Lorentzian FWHM of the bulk component were 0.195 eV and 0.085 eV, respectively.

crystal, semiconductor

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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