NIST X-ray Photoelectron Spectroscopy Database

Click the column to sort in ascending or descending order.
Enter a string in the input box in the column header and press the enter to filter the search result in the selected column.
Click on the hyperlink in the column for more information.

Total Records: 20

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

GaAs

DS-3d

0.46

DS-2p

0.60

Si/GaAs

99.55

Si/GaAs

99.52

Si/GaAs

99.95

Si/GaAs

99.92

Si/GaAs

99.87

Si/GaAs

99.99

GaAs

18.81

GaAs

18.85

Si/GaAs

99.60

Si/GaAs

99.53

Si/GaAs

99.57

Si/GaAs

99.55

Si/GaAs

99.50

Si/GaAs

99.49

Si/GaAs

99.81

Si/GaAs

99.96

Si/GaAs

100.08

99.67

Data Type:

Doublet Separation for Photoelectron Lines

Line Designation:

DS-2p

Double Separation (eV):

0.60

Energy Uncertainty:

0.04

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

0.73

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type Si(001)-(2x1). Branching ratio = 0.58. The intensity ratio of the Gaussian/Lorentzian components was 50/50. The spectra were recorded at normal emission.