NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 7

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

CdS/CuInSe₂

9.70

CuInSe₂

17.75

CuInSe₂/ZnSe

17.65

CuInSe₂/ZnSe

16.90

CuInSe₂

17.30

ZnSe/CuInSe₂

10.05

ZnSe/CuInSe₂

9.25

Photoelectron Line

9.70

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

Overall Energy Resolution (eV):

0.1

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

90 A CdS were deposited at 298 K onto p-type CuInSe2(112) cleaned by Ar+ ion bombardment (Ep = 500 eV, angle of incidence = 30 degrees) and annealing (T = 773 K, time = ~2 min). The thickness was measured using a quartz-crystal thickness monitor. The spectra were recorded at normal emission.

Specimen:

semiconductor, sputtered and heated, thin film, vapor deposited and heated

Method of Determining Specimen Composition:

Electron-Probe Microanalysis

Method of Determining Specimen Crystallinity:

X-ray Diffraction

Specimen Temperature (K):

300