Reliable (reported energy within 300 eV of a reference energy)
Comment:
Saturation coverage of K on Si(111)-(R3xR3)R30-B. The substrate was prepared by exposing he clean lightly-doped n-type surface (7x7) with a resistivity of 1 ohm cm to B10H14 and by subsequent annealing (T = 1173 K). The relative intensity was 0.68. Branching ratio = 0.5.