NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Si

SiO₂/Si

oxide state

silicon dioxide/silicon

CAS Registry No:

7631-86-9

element, IV semiconductor, non-stoichiometric oxide, oxide

Author Name(s):

Yu X., Hantsche H.

Surf. Interface Anal. 20, 555

Pub Year:

1993

book All Records in this Publication

Photoelectron Line

Line Designation:

2p

Binding Energy (eV):

103.00

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

other type of curve fit

Full Width at Half-maximum Intensity (eV):

1.7

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

Yes

Anode Material:

Al

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Adventitious carbon

Energy Scale Evaluation:

Reliable, with one-point correction of energy scale

Comment:

11 A SiO2/n-type Si(111). The thickness was measured by an XPS depth profile measurment. An electron flood gun (Ep = 2 eV) was used for charge compensation. Emission angle = 55 degrees.

native oxide, oxidizing atmosphere, thermal oxide, thin layer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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