Comment:
45 A Ti were deposited onto n-type InP(110) and heated at 623 K. The InP was cleaned by Ar+ ion bombardment (Ep = 2 keV, Ip = 20 microamperes cm-2, time = 10 min) and annealing (T = 623 K, time = 30 min). The chemical shift is relative to the pure InP. Emission angle = 15 degrees.