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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
Si
Formula:
Si
XPS Formula:
inner dimer atoms
Name:
silicon
CAS Registry No:
7440-21-3
Class:
element, II-VI semiconductor, IV semiconductor
Author Name(s):
Dufour G., Rochet F., Roulet H., Sirotti F.
Journal:
Surf. Sci. 304, 33
DOI:
10.1016/0039-6028(94)90750-1
Pub Year:
1994
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Total Records:
30
Element
Atomic No
Formula
Spectral Line
Energy (eV)
Details
Si
14
Si
CS-2p
0.00
Si
14
Si/NH
3
CS-2p
0.00
Si
14
Si/NH
3
CS-2p
0.00
Si
14
Si/NH
3
CS-2p
0.00
Si
14
Si/NH
3
CS-2p
0.00
Si
14
Si/NH
3
CS-2p
0.00
Si
14
Si/NH
3
CS-2p
0.00
Si
14
Si/NH
3
CS-2p
0.36
Si
14
Si/NH
3
CS-2p
0.72
Si
14
Si/NH
3
CS-2p
1.53
Si
14
Si/NH
3
CS-2p
0.35
Si
14
Si/NH
3
CS-2p
0.81
Si
14
Si/NH
3
CS-2p
1.68
Si
14
Si/NH
3
CS-2p
0.72
Si
14
Si/NH
3
CS-2p
1.50
Si
14
Si/NH
3
CS-2p
2.58
Si
14
Si/NH
3
CS-2p
0.60
Si
14
Si/NH
3
CS-2p
2.59
Si
14
Si/NH
3
CS-2p
0.37
Si
14
Si/NH
3
CS-2p
0.70
Si
14
Si/NH
3
CS-2p
0.33
Si
14
Si/NH
3
CS-2p
0.74
Si
14
Si
CS-2p
0.00
Si
14
Si
DS-2p
0.60
Si
14
Si
SS-2p
-0.52
Si
14
Si
SS-2p
0.18
Si
14
Si
SS-2p
0.75
Si
14
Si
SS-2p
-0.72
Si
14
Si
SS-2p
0.36
Si
14
Si
SS-2p
0.80
Data Type:
Surface Core-level Shift
Line Designation:
SS-2p
Surface Core-Level Shift (eV):
0.18
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.45
Lorentzian Width (eV):
0.1
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
135
Overall Energy Resolution (eV):
0.3
Calibration:
FL = Fermi level
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Si(001)-(2x1). The sample was cleaned by heating at 1323 K for 15 s. The relative intensity was 0.679. Branching ratio = 0.5.
Specimen:
annealed, crystal, semiconductor, wafer
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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