NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 5

Data Type:

Surface Core-level Shift

Line Designation:

SS-3d

Surface Core-Level Shift (eV):

-0.32

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.56

Lorentzian Width (eV):

0.20

Use of X-ray Monochromator:

Anode Material:

other source

X-ray Energy:

100

Overall Energy Resolution (eV):

0.2

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

ZnSe(100)-(2x1), Se-rich structure. Branching ratio = 0.65. Doping levels are 2E18 cm-3 for n-type ZnSe (Cl-doped) and 5E17 for p-type (N-doped). The sample was Se-decapped at ~423 K and then at 823 K.

Specimen:

annealed, crystal, molecular beam epitaxy, semiconductor, thick film

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300