NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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Se

ZnSe

zinc selenide

CAS Registry No:

1315-09-9

chalcogenide, II-VI semiconductor, selenide

Author Name(s):

Chen W., Kahn A., Soukiassian P., Mangat P.S., Gaines J., Ponzoni C. et al.

Phys. Rev. B 49, 10790

Pub Year:

1994

book All Records in this Publication

Surface Core-level Shift

Line Designation:

SS-3d

Surface Core-Level Shift (eV):

-0.30

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.56

Lorentzian Width (eV):

0.20

Use of X-ray Monochromator:

No

Anode Material:

other source

X-ray Energy:

100

Overall Energy Resolution (eV):

0.2

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

ZnSe(100)c(2x2), Zn-rich structure. Branching ratio = 0.65. Doping levels are 2E18 cm-3 for n-type ZnSe (Cl-doped) and 5E17 for p-type (N-doped). The sample was Se-decapped at ~423 K and then at 823 K.

annealed, crystal, molecular beam epitaxy, semiconductor, thick film

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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