NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

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As

O₂/GaAs

oxygen/gallium arsenide

CAS Registry No:

arsenic, arsenide, element, III-V semiconductor, IV-VI semiconductor, non-stoichiometric oxide, oxide

Author Name(s):

Kaul P., Schutze A., Kohl D., Brauers A., Weyers M.

J. Cryst. Growth 123, 411

Pub Year:

1992

book All Records in this Publication

Chemical Shift

Line Designation:

CS-2p_3/2

Chemical Shift (eV):

3.10

Energy Uncertainty:

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Use of X-ray Monochromator:

No

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Element

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

4.5E8 L O2/GaAs(100). Adsorption of O2 was performed at 200 mbar for 5 min at 470, 570 and 670 K and at 200 mbar for 30 min at 570 K. Ratios of oxidized versus unoxidized peak areas were 0.45, 0.95, 1.53 and 1.67, respectively.

oxidizing atmosphere, oxygen pressure, thick oxide, thin layer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300

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