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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0
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General:
Citation
Data Processing:
Measurement:
Specimen:
Element:
Si
Formula:
Si/Zr
Name:
silicon/zirconium
CAS Registry No:
7440-21-3
Class:
element, silicide
Author Name(s):
Yamauchi T., Kitamura H., Wakai N., Zaima S., Koide Y., and Yasuda Y.
Journal:
J. Vac. Sci. Technol. A 11, 2619
DOI:
10.1116/1.578616
Pub Year:
1993
book
All Records in this Publication
Data Type:
Photoelectron Line
Line Designation:
2p
3/2
Binding Energy (eV):
98.70
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
data
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):
Use of X-ray Monochromator:
No
Anode Material:
Mg
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
35 A Zr/Si(100)-(2x1) annealed at 673 K for 40 min. The substrate was p-type Si(100) wafer with a resistivity of 1 to 5 ohm cm.
Specimen:
reacted, thin film, vapor deposited and heated, wafer
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Reflection High-Energy Electron Diffraction
Specimen Temperature (K):
300
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