NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

One Page Summary

Instruction: Click on selected Tab for more information.

Element:

Formula:

GaAs

Name:

gallium(III) arsenide

CAS Registry No:

1303-00-0

Class:

arsenide, II-VI semiconductor, III-V semiconductor

Author Name(s):

Jimenez I., Moreno M., Martin-Gago J.A., Asensio M.C., Sacedon J.L.

Journal:

J. Vac. Sci. Technol. A 12, 1170

DOI:

Pub Year:

1994

book All Records in this Publication

Data Type:

Surface Core-level Shift

Line Designation:

SS-3d_5/2

Surface Core-Level Shift (eV):

-0.29

Energy Uncertainty:

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.15

Lorentzian Width (eV):

0.25

Use of X-ray Monochromator:

Anode Material:

other source

X-ray Energy:

126.10

Overall Energy Resolution (eV):

0.35

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n and p-type GaAs(111)-(1x1) with carrier concentrations of 3E18 cm-3 and 1.7E18 cm-3, respectively. Branching ratio = 0.66.

Specimen:

cleaved crystal, crystal, semiconductor, vacuum cleaved

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300