NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 10

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

O₂/GaAs

CS-3d_5/2

4.50

O₂/GaAs

CS-3d_5/2

3.10

O₂/GaAs

CS-3d_5/2

0.45

O₂/GaAs

CS-3d_5/2

2.00

O₂/GaAs

CS-3d_5/2

1.30

O₂/GaAs

CS-3d_5/2

0.70

GaAs

DS-3d

0.69

GaAs

DS-3d

0.45

GaAs

SS-3d_5/2

-0.29

GaAs

SS-3d_5/2

0.40

Chemical Shift

CS-3d_5/2

0.45

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.45

Lorentzian Width (eV):

0.17

Use of X-ray Monochromator:

Anode Material:

other source

X-ray Energy:

126.10

Overall Energy Resolution (eV):

0.35

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

~1E4 L O2/n and p-type GaAs(111)-(1x1) with carrier concentrations of 3E18 cm-3 and 1.7E18 cm-3, respectively. The thickness of the native oxide was 9 A. Branching ratio = 0.66. The chemical shift is relative to the pure GaAs.