NIST X-ray Photoelectron Spectroscopy Database

Click the column to sort in ascending or descending order.
Enter a string in the input box in the column header and press the enter to filter the search result in the selected column.
Click on the hyperlink in the column for more information.

Total Records: 10

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

InAs

DS-3d

0.70

InAs

DS-4d

0.86

InSb

DS-4d

0.86

InSb

DS-4d

1.25

InSb

SS1-4d_5/2

0.49

InAs

SS1-3d_5/2

0.71

InAs

SS2-3d_5/2

0.28

InAs

SS2-3d_5/2

-0.33

InSb

SS2-4d_5/2

0.26

InSb

SS3-4d_5/2

-0.30

Data Type:

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS2-3d_5/2

Surface Core-Level Shift (eV) for the second Layer of Atoms:

-0.33

Energy Uncertainty:

0.030

Background Subtraction Method:

Linear

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

0.155

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

80-155

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-type S-doped InAs(-1-1-1)-(2x2) with a carrier concentration of 8.7E16 cm-3. Peak locations: Voigt function. The spectra were recorded at normal emission, 35 and 70 degrees.

Specimen:

crystal, molecular beam epitaxy, semiconductor, sputtered and heated, wafer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Reflection High-Energy Electron Diffraction

Specimen Temperature (K):

300