NIST X-ray Photoelectron Spectroscopy Database

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Total Records: 10

Element

Atomic No

Formula

Spectral Line

Energy (eV)

Details

InAs

DS-4d

0.86

InSb

DS-4d

0.86

InAs

DS-3d

0.70

InSb

DS-4d

1.25

InSb

SS1-4d_5/2

0.49

InAs

SS1-3d_5/2

0.71

InAs

SS2-3d_5/2

0.28

InAs

SS2-3d_5/2

-0.33

InSb

SS2-4d_5/2

0.26

InSb

SS3-4d_5/2

-0.30

Data Type:

Doublet Separation for Photoelectron Lines

Line Designation:

DS-4d

Double Separation (eV):

1.25

Energy Uncertainty:

0.030

Background Subtraction Method:

Linear

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

0.200

Use of X-ray Monochromator:

Yes

Anode Material:

other source

X-ray Energy:

70-105

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

p-type Cd-doped InSb(-1-1-1)-(2x2) with a carrier concentration of 2E13 cm-3. Peak locations: Voigt function. The spectra were recorded at normal emission, 30 and 60 degrees.

Specimen:

crystal, molecular beam epitaxy, semiconductor, sputtered and heated, wafer

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Reflection High-Energy Electron Diffraction

Specimen Temperature (K):

300