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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
Si
Formula:
O2/As/Si
XPS Formula:
silicon atoms attached to As
Name:
oxygen/arsenic/silicon
CAS Registry No:
7440-38-2
Class:
arsenic, element, non-stoichiometric oxide, oxide

Citation:
Author Name(s):
Rochet F., Poncey C., Dufour G., Roulet H., Rodrigues W.N., Sauvage M., et al
Journal:
Surf. Sci. 326, 229
DOI:
Pub Year:
1995

Data Processing:
Data Type:
Chemical Shift
Line Designation:
CS-2p3/2
Chemical Shift (eV)
0.41
Energy Uncertainty:
Background Subtraction Method:
Shirley
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
0.40
Lorentzian Width (eV):
0.1

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
145
Overall Energy Resolution (eV):
0.30
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
2.7E12 L O2/As/Si. B-doped Si(001)-(2x1) with a resistivity between 0.076 and 0.1ohm cm was exposed to an As4 flux at 623 and 773 K under a pressure of about 1E-6 Torr. LEED pattern was (2x1) after As deposition. The relative intensity was 0.177.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
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