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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
O2/As/Si
As(I) state
oxygen/arsenic/silicon
arsenic, element, non-stoichiometric oxide, oxide

Citation:
Rochet F., Poncey C., Dufour G., Roulet H., Rodrigues W.N., Sauvage M., et al
Surf. Sci. 326, 229
Pub Year:
1995

Data Processing:
Chemical Shift
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
145
Overall Energy Resolution (eV):
0.30
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
2.7E12 L O2/As/Si. B-doped Si(001)-(2x1) with a resistivity between 0.076 and 0.1ohm cm was exposed to an As4 flux at 623 and 773 K under a pressure of about 1E-6 Torr. LEED pattern was (2x1) after As deposition. The chemical shift is relative to the As dimers. The relative intensity was 0.025.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

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