NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

Ge

Ge

dimer up^-atoms

germanium

CAS Registry No:

7440-56-4

element, II-VI semiconductor, IV semiconductor, IV-VI semiconductor

Citation:

Author Name(s):

Goldoni A., Modesti S., Dhanak V.R., Sancrotti M., Santoni A.

Phys. Rev. B 54, 11340

Pub Year:

1996

book All Records in this Publication

Data Processing:

Surface Core-level Shift for the Second Layer of Atoms

Line Designation:

SS1-3d_5/2

Surface Core-Level Shift (eV) for the first Layer of Atoms

-0.24

Energy Uncertainty:

0.01

Background Subtraction Method:

other

Peak Location Method:

mixed Gaussian/Lorentzian

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

0.35

Lorentzian Width (eV):

0.15

Measurement:

Use of X-ray Monochromator:

No

Anode Material:

other source

X-ray Energy:

45/70

Overall Energy Resolution (eV):

0.23

Calibration:

FL = Fermi level

Charge Reference:

Conductor

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

n-Ge(100)-(2x1). The sample was prepared by cycles of Ar+ ion bombardment and annealing (T = 1000 K) followed by slow cooling to 300 K. The spectra were recorded at normal emission and 70 degrees. Branching ratio = 0.66+-0.03. The coverage related to this state was 0.5 ML.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Low-energy Electron Diffraction

Specimen Temperature (K):

300

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