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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
silicon
element, II-VI semiconductor, IV semiconductor

Citation:
Cricenti A., Le Lay G., Aristov V.Y., Nesterenko B., Safta N., Lacharme J.P., et al.
J. Electron Spectrosc. Relat. Phenom. 76, 613
Pub Year:
1995

Data Processing:
Surface Core-level Shift
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
151
Overall Energy Resolution (eV):
0.08
Calibration:
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-Si(110)-(16x2) with a carrier concentration of 1E14 cm-3. The sample was outgassed at 773 K and cleaned by heating with direct current (T = 1273 - 1473 K, time = 10 min). Peak locations: Voigt function. Branching ratio = 0.5 The spectra were recorded at normal emission and 55 degrees.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

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