There was a problem with the connection!

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
adatoms
silicon
element, II-VI semiconductor, IV semiconductor

Citation:
Scholz S.M., Jacobi K.
Surf. Sci. 369, 117
Pub Year:
1996

Data Processing:
Surface Core-level Shift
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
135
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
Si(113)-(3x2). FAT mode. The spectra were recorded at normal emission and 40 degrees. Branching ratio = 0.52. The relative intensity was 0.11.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

An error has occurred. This application may no longer respond until reloaded. Reload 🗙