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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
Si0.397Ge0.9O0.594
silicon germanium oxide (Si0.397Ge0.9O0.594)
double oxide, oxide

Citation:
Kibel M.H., Leech P.W.
Surf. Interface Anal. 24, 605
Pub Year:
1996

Data Processing:
Photoelectron Line

Measurement:
Anode Material:
Al
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Adventitious carbon
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
The Ge-doped layers were formed by flame hydrolysis deposition. The sample was cleaned by Ar+ ion bombardment (Ep = 5 keV, j =~ 2 microamperes cm-2, time = 2 min). FAT mode.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
300

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