Reliable, with one-point correction of energy scale
Comment:
The thickness was 16 ML. The Cu(100) substrate was cleaned by Ar+ ion bombardment (Ep = 3 keV, j = 10 microamperes cm-2, T = 723 K) and annealing (T = 873 K). The Cu(100) crystal was maintained at ~403 K during the deposition. FAT mode. The intensity ratio of the Gaussian/Lorentzian components was 90/10. The thickness was measured using a quartz-crystal thickness monitor. The intensity ratio of the carbonyl/ether oxygen was 0.91.