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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
carbon atoms in a modified ("carburized") topmost bilayer
silicon carbide
carbide, II-VI semiconductor, IV semiconductor, IV-VI semiconductor, silicide

Citation:
Johansson L.I., Owman F., Martensson P.
Phys. Rev. B 53, 13793
Pub Year:
1996

Data Processing:
Surface Core-level Shift for the Second Layer of Atoms
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
330
Overall Energy Resolution (eV):
0.20
Calibration:
FL = Fermi level
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type doped 6H-SiC(0001) with a carrier concentration of 3.8E18 cm-3. The (R3xR3)R30 degrees reconstructed surface was prepared by resistive heating (T = 1123 K, time = 2 min). The spectra were recorded at normal emission.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
100

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