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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
gallium(III) arsenide
arsenide, II-VI semiconductor, III-V semiconductor

Citation:
Varekamp P.R., Hakansson M.C., Kanski J., Shuh D.K., Bjorkqvist M., Gothelid M., et al
Phys. Rev. B 54, 2101
Pub Year:
1996

Data Processing:
Surface Core-level Shift
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
60
Overall Energy Resolution (eV):
0.2
Calibration:
Charge Reference:
Element
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
GaAs(001)-c(4x4). The spectra were recorded at normal emission.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

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