NIST X-ray Photoelectron Spectroscopy Database

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:

Tab Page Summary

General:

InAs

indium(III) arsenide

1303-11-3

arsenide, II-VI semiconductor, III-V semiconductor

Citation:

Author Name(s):

Zborowski J.T., Vigliante A., Moss S.C., Golding T.D

Journal:

J. Appl. Phys. 79, 8379

DOI:

Pub Year:

1996

book All Records in this Publication

Data Processing:

Photoelectron Line

16.90

Background Subtraction Method:

Peak Location Method:

data

Full Width at Half-maximum Intensity (eV):

Gaussian Width (eV):

Lorentzian Width (eV):

Measurement:

Use of X-ray Monochromator:

Anode Material:

X-ray Energy:

Overall Energy Resolution (eV):

Calibration:

Charge Reference:

Valence band minimum

Energy Scale Evaluation:

Reliable (reported energy within 300 eV of a reference energy)

Comment:

The film thickness was 2000 A.

Specimen:

Method of Determining Specimen Composition:

Method of Determining Specimen Crystallinity:

Specimen Temperature (K):

300