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NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:


Tab Page Summary

General:
atoms in surface indium clusters
indium stibnide
II-VI semiconductor, III-V semiconductor, intermetallic, stibnide

Citation:
Kim J.W., Kim S., Seo J.M., Tanaka S.-I., Kamada M.
Phys. Rev. B 54, 4476
Pub Year:
1996

Data Processing:
Surface Core-level Shift for the Second Layer of Atoms
mixed Gaussian/Lorentzian

Measurement:
Anode Material:
other source
X-ray Energy:
54
Overall Energy Resolution (eV):
0.25
Calibration:
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
p-InSb(110)-(2x2). The sample was cleaned by cycles of Ar+ ion bombardment and annealing (T = 573 K) and final annealing (T = ~623 K). Branching ratio = 0.70. Emission angle = 10 degrees. The relative intensity of the surface component was 0.07.

Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300

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