There was a problem with the connection!
U.S. flag

An official website of the United States government

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
As
Formula:
InAs
Name:
indium(III) arsenide
CAS Registry No:
1303-11-3
Class:
arsenide, II-VI semiconductor, III-V semiconductor

Citation:
Author Name(s):
Andersson C.B.M., Olsson L.O, Hakansson M.C., Ilver L., Karlsson U.O., and Kanski J.
Journal:
J. Phys. IV 4, C9-209
DOI:
Pub Year:
1994

Data Processing:
Data Type:
Doublet Separation for Photoelectron Lines
Line Designation:
DS-3d
Double Separation (eV)
0.69
Energy Uncertainty:
Background Subtraction Method:
other
Peak Location Method:
mixed Gaussian/Lorentzian
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
Yes
Anode Material:
other source
X-ray Energy:
105
Overall Energy Resolution (eV):
Calibration:
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
n-type S-doped InAs(111)-(2x2). Peak locations: Voigt function. The spectra were recorded at normal emission and 60 degrees, the branching ratios were 0.66 and 0.65, respectively.

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Low-energy Electron Diffraction
Specimen Temperature (K):
300
An error has occurred. This application may no longer respond until reloaded. Reload 🗙