Tab Page Summary
II-VI semiconductor, silicide
Peto G., Zsoldos E., GucziZ L., Schay Z.
Solid State Commun. 57, 817
Overall Energy Resolution (eV):
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable (reported energy within 300 eV of a reference energy)
Comment:
TiSi2 films were prepared by solid phase reaction between the evaporated Ti layer (20 nm thick) and the Si(111) substrate and annealed at 973 K.
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
X-ray Diffraction
Specimen Temperature (K):
300