There was a problem with the connection!

NIST X-ray Photoelectron Spectroscopy Database (SRD 20), Version 5.0

Details Summary:
Summary Page
Tab Page Summary

General:
Element:
P
Formula:
GaP
Name:
gallium phosphide
CAS Registry No:
12063-98-8
Class:
chalcogenide, II-VI semiconductor, III-V semiconductor, phosphide

Citation:
Author Name(s):
Mizokawa Y., Iwasaki H., Nakamura S.
Journal:
Jpn. J. Appl. Phys. 20, L491
DOI:
Pub Year:
1981

Data Processing:
Data Type:
Photoelectron Line
Line Designation:
2p3/2
Binding Energy (eV)
128.50
Energy Uncertainty:
Background Subtraction Method:
Peak Location Method:
Full Width at Half-maximum Intensity (eV):
Gaussian Width (eV):
Lorentzian Width (eV):

Measurement:
Use of X-ray Monochromator:
No
Anode Material:
X-ray Energy:
Overall Energy Resolution (eV):
Calibration:
Au
Charge Reference:
Conductor
Energy Scale Evaluation:
Reliable, with two-point correction of energy scale
Comment:

Specimen:
Specimen:
Method of Determining Specimen Composition:
Method of Determining Specimen Crystallinity:
Specimen Temperature (K):
An error has occurred. This application may no longer respond until reloaded. Reload 🗙